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The silicate-based phosphor silicate-based phosphor, and method of manufacturing 发明申请

2023-10-23 4200 333K 0

专利信息

申请日期 2025-07-01 申请号 JP2011533889
公开(公告)号 JPWO2011129331A1 公开(公告)日 2013-07-18
公开国别 JP 申请人省市代码 全国
申请人 The University of Niigata University304027279; Lead Chemical Co Ltd510103794
简介 There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by : introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5≰x≰1.9, preferably, 0.8≰x≰1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4 : Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.


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