| 申请日期 | 2025-07-01 | 申请号 | US15834380 |
| 公开（公告）号 | US20190181224A1 | 公开（公告）日 | 2019-06-13 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | International Business Machines Corporation | ||
| 简介 | A semiconductor structure containing a gate-all-around nanosheet field effect transistor having a self-limited inner spacer composed of a rare earth doped germanium dioxide that provides source/drain isolation between rare earth metal silicide ohmic contacts is provided. | ||
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