| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device having a gate insulating film which has a high dielectric constant and can reduce a leakage current. ŽSOLUTION : The semiconductor device includes a first dielectric film 23 provided on a semiconductor substrate 11 and containing lantern aluminum silicon oxide or oxynitride, a second dielectric film 24 provided on the first dielectric film 23 and containing oxide or oxynitride containing at least one of hafnium (Hf), zirconium (Zr), titanium (Ti), and rare-earth metal, and an electrode 14 provided on the second dielectric film 24. ŽCOPYRIGHT : (C)2010, JPO&INPIT Ž |
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