| 申请日期 | 2025-09-11 | 申请号 | KR1020110147470 |
| 公开（公告）号 | KR1020130078493A | 公开（公告）日 | 2013-07-10 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE | ||
| 简介 | PURPOSE : A manufacturing method of an AgSbTe 2 type thermal conduction material is provided to improve a thermal conduction property by equally forming nanomaterials.CONSTITUTION : A rare earth type element is inserted into the ample of a vacuum condition. The doping material of 0.01-1 weight is added to the element. The element is fused. The fused raw-material is rapidly cooled. Ingot is manufactured by the rapid cool.COPYRIGHT KIPO 2013 | ||
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