| 简介 |
PURPOSE : A method for manufacturing a silicon carbide susceptor is provided to omit a post process and to secure a susceptor made of a single material and having accurate standard and shape.CONSTITUTION : A graphite substrate(10) having a protruded surface(11) is prepared. SiC is deposited on the graphite substrate by a chemical vapor deposition method. The graphite substrate is removed. A susceptor having an intagliated pocket corresponding to the protruded surface is obtained. The susceptor is only made of the SiC.COPYRIGHT KIPO 2013 |
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