| 简介 |
PROBLEM TO BE SOLVED : To provide a method for determining the deterioration state of the substrate holder of an ion implanter easily with high accuracy.
SOLUTION : In the method for determining deterioration of the substrate holder of an ion implanter, an ion implantation layer is formed in a semiconductor wafer by holding the semiconductor wafer by means of a substrate holder in the ion implanter, and then injecting at least one kind of gas ions of hydrogen ion or rare gas ion from the surface of the semiconductor wafer, the light scattering intensity distribution on the surface of the semiconductor wafer subjected to ion implantation is measured, and then deterioration of the substrate holder of an ion implanter holding the semiconductor wafer is determined.
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