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Single-crystal component for laser and its manufacturing method 发明授权

2023-07-31 1790 39K 0

专利信息

申请日期 2025-06-24 申请号 JP2006002330
公开(公告)号 JP5208364B2 公开(公告)日 2013-06-12
公开国别 JP 申请人省市代码 全国
申请人 NEC Tokin Corporation134257; Kiyoshi Shimamura506010024
简介 PROBLEM TO BE SOLVED : To provide a method of manufacturing a single-crystal component for a laser, capable of easily manufacturing a single-crystal component for a 2-μm laser, which has a sufficient heat-dissipation efficiency and a simple structure, at a low cost. SOLUTION : In the manufacturing method using a crystal growing unit, when a YLiF4parent material (raw material melt 6) to which 5 atom% Tm and 0.5 atom% Ho are added and a YLiF4parent material (raw material melt 5) to which the above atoms are not added are placed in outer and inner crucibles 3 and 4, respectively and melted, the raw material melt 6 in the outer crucible 3 rises to the center of an upper surface through a slit 10-1 of an Re fixture 9, while the raw material melt 5 in the inner crucible 4 rises to the periphery of the upper surface through a slit 10-2. When a seed crystal 11 is brought into contact with the center of the upper surface and pulled up without being rotated, the raw material melt 6 at the center of the Re fixture 9 crystallizes to become an additive-containing crystal 7, and the raw material melt 5 at the periphery of the upper surface subsequently begins to crystallize and becomes an additive-free crystal 8, which yields the single crystal (component) for the laser. The obtained single crystal has a double structure with partially different compositions at its periphery and center. COPYRIGHT : (C)2007, JPO&INPIT


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