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PEROVSKITE MANGANESE OXIDE THIN FILM AND MANUFACTURING METHOD THEREFOR 发明申请

2023-02-07 2690 874K 0

专利信息

申请日期 2026-03-06 申请号 US13817127
公开(公告)号 US20130140661A1 公开(公告)日 2013-06-06
公开国别 US 申请人省市代码 全国
申请人 Yasushi Ogimoto
简介 A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9≧n≧1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.


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