| 申请日期 | 2025-07-21 | 申请号 | US13305568 |
| 公开（公告）号 | US20130134373A1 | 公开（公告）日 | 2013-05-30 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Yun Wang; Imran Hashim; Tony Chiang | ||
| 简介 | A nonvolatile resistive memory element has a novel variable resistance layer comprising one or more rare-earth oxides. The rare-earth oxide has a high k value, a high bandgap energy, and the ability to maintain an amorphous structure after thermal anneal processes. Thus, the novel variable resistance layer facilitates improved switching performance and reliability of the resistive memory element. | ||
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