| 简介 |
PROBLEM TO BE SOLVED : To provide a method of causing high-crystallinity and good-quality graphene to grow efficiently at temperatures as low as possible.
SOLUTION : Prior to growth of graphene, a pretreatment is carried out. The pretreatment includes introducing a rare gas from a shower ring 57 into a treatment container 1 while operating an exhaust device 99 to vacuumize the inside of the treatment container 1 and simultaneously introducing a reducing gas and a nitrogen-containing gas from a shower plate 59 into the treatment container 1. Under such conditions, microwaves generated in a microwave generation section 35 are guided in a predetermined mode to a planar antenna 33 through a waveguide 47 and a coaxial waveguide 49 and introduced into the treatment container 1 through a microwave radiation hole 33a and a transmission plate 39 of the planar antenna 33. The reducing gas and the nitrogen-containing gas are converted into plasma by the microwaves, and the plasma activates the catalyst metal layer of the surface of a wafer W.
COPYRIGHT : (C)2013, JPO&INPIT |
客服热线：
手机版
二维码
