| 简介 |
PROBLEM TO BE SOLVED : To provide a sputtering target that suppresses the occurrence of anomalous discharge in the formation of an oxide semiconductor film by a sputtering method and can continuously and stably form a film and to also provide an oxide for the sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target).
SOLUTION : A sintered compact is provided that has a bixbyite structure and contains indium oxide, gallium oxide and zinc oxide. The composition amounts (atomic%) of indium (In), gallium (Ga) and zinc (Zn) fall within a composition range satisfying the formula : In/(In+Ga+Zn)<0.75.
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