| 简介 |
PROBLEM TO BE SOLVED : To provide a liquid phase epitaxial growth method for a bismuth (Bi) substituted rare earth-iron-garnet film (RIG film), which is intended for short wavelength and prevented from radial linear cracks occurring on the surface of an obtained RIG film when a Bi substituted rare earth-iron-garnet film with a thin film thickness is selected for a garnet substrate with a thin plate thickness.
SOLUTION : In the liquid phase epitaxial growth method wherein the garnet substrate is brought into contact with the surface of a flux liquid dissolving RIG film components to grow the RIG film, a plate thickness of the garnet substrate is 200-350 μm, and a film thickness of the RIG film is 100-300 μm. When the plate thickness of the garnet substrate is T (μm) and the film thickness of the RIG film is t (μm), following relationship (numerical formula 1) is satisfied in addition to the above requirements : -2T+700 (μm) ≤t≤ -4T+1, 500 (μm).
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