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BARIUM-TITANATE CERAMIC SEMICONDUCTOR AND PTC THERMISTOR USING SAME 发明申请

2023-03-10 2890 555K 0

专利信息

申请日期 2025-08-27 申请号 WOJP12069848
公开(公告)号 WO2013065372A1 公开(公告)日 2013-05-10
公开国别 WO 申请人省市代码 全国
申请人 MURATA MANUFACTURING CO LTD; AOTO Wataru; KATSU Hayato; NABIKA Yasuhiro
简介 Provided are : a barium-titanate ceramic that has a low resistivity near room temperature, a high withstand voltage, and positive resistance-temperature characteristics; and a PTC thermistor using same. In this barium-titanate ceramic semiconductor, which is represented by the general formula BaTiO3 and has positive resistance-temperature characteristics, zirconium is substituted in for some of the titanium sites, with the zirconium content being in the 0.14-0.88 mol% range. Said barium-titanate ceramic semiconductor also contains at least one rare-earth element selected from the group consisting of yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium. This barium-titanate ceramic semiconductor is used as a thermistor body having positive resistance-temperature characteristics, forming a PTC thermistor.


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