| 简介 |
PROBLEM TO BE SOLVED : To solve the problem of a pn junction diode that a leak current increases to increase loss at the time of inverse-direction voltage application when, to shorten an inverse recovery time trr, an electron beam is radiated to the entire semiconductor substrate (n-type semiconductor layer and p-type semiconductor layer), to form a lifetime killer. SOLUTION : A method of manufacturing a diode includes the steps of : forming pn junction with one conductive-type semiconductor layer 2 of low concentration and an invert conductive-type semiconductor layer 5 of high concentration; forming a charge capture layer 7 in the invert conductive-type semiconductor layer 5 by injecting or radiating a rare gas ion so that a peak position of a flying distance is positioned in the invert conductive-type semiconductor layer 5; forming a first electrode 8 which is connected to the invert conductive-type semiconductor layer 5; and forming a second electrode 11 which is electrically connected to the one conductive-type semiconductor layer 2. COPYRIGHT : (C)2013, JPO&INPIT |
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