| 简介 |
PROBLEM TO BE SOLVED : To provide a memory element having stable resistance change switching characteristics without forming a rare earth oxide layer. SOLUTION : A memory layer 17 and an upper electrode 18 are formed on a lower electrode 14 and an interlayer insulating film 15. The memory layer 17 is doped with an ion conduction material such as Te or the like, Cu, Ag, Ge or Zn as a metal element, and, further, any one from a group of Si, Zr, Al, Ti and Cr. Before the first write-in operation, a high resistance layer 19 is formed at an interface of the memory layer 17 with the lower electrode 14 by applying initialization pulse voltage to the upper electrode 18 and the lower electrode 14. The high resistance layer 19 is composed of an oxide layer or a nitride layer, of Si, Zr, Al, Ti or Cr, and different from a conventional rare earth oxide film. COPYRIGHT : (C)2009, JPO&INPIT |
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