| 简介 |
Provided is a drive circuit for an insulated-gate type device, wherein a "rare On" of a device can be prevented. A gate-voltage control MOSFET (14) for lowering the gate voltage of a power MOSFET (8) is provided between the gate and the source of the power MOSFET (8), and the threshold voltage value (Va(th)) of the gate-voltage control MOSFET (14) is set to be lower than the threshold voltage value (Vg(th)) of the power MOSFET (8). When the voltage (Vin) at a gate terminal (5) is not less than the threshold voltage value (Va(th)) of the gate-voltage control MOSFET (14) and is lower than a threshold voltage value (VIN(th)), the gate-voltage control MOSFET (14) is driven/controlled to be in an On state. |
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