| 申请日期 | 2025-07-08 | 申请号 | US12596539 |
| 公开（公告）号 | US8419823B2 | 公开（公告）日 | 2013-04-16 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Koichiro Nakamura; Akihiro Hishinuma; Shinji Kamiya | ||
| 简介 | The present disclosure describes a method for recovering metals such as gallium, indium and aluminum from III-V group compound semiconductors or semiconducting materials thereof containing arsenic, antimony and/or selenium. The method includes the step of adsorbing the arsenic, antimony and selenium selectively to an adsorbent containing the rare-earth metal compound with the use of the adsorbent. | ||
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