| 简介 |
The present disclosure concerns a magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) comprising a storage layer (23) having a net storage magnetization (230) that is adjustable from a first direction to a second direction when the magnetic tunnel junction (2) is at a high temperature threshold and that is pinned at a low temperature threshold; a sense layer (21) having a sense magnetization (211) that is reversible; and a tunnel barrier layer (22) separating the sense layer (21) from the storage layer (23). At least one of the storage layer (23) and the sense layer (21) comprises a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization (211, 231), and a sub-lattice of 4f rare-earth atoms providing a second magnetization (212, 232), such that at a compensation temperature (TCOMP) of said at least one of the storage layer (23) and the sense layer (21), the first magnetization (211, 231) and the second magnetization (212, 232) are substantially equal. The present disclosure also pertains to a method for writing and reading the MRAM cell (1). The disclosed MRAM cell (1) can be written and read using a small writing and reading field, respectively. |
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