| 申请日期 | 2025-07-22 | 申请号 | JP2007512894 |
| 公开（公告）号 | JP5174456B2 | 公开（公告）日 | 2013-04-03 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | Fukuda Crystal Laboratory Ltd502209796 | ||
| 简介 | It is an object of the present invention to provide a material for a piezoelectric device used at a high temperature zone, which can be used at the high temperature zone exceeding 400°C and has a resistivity whose temperature dependence is low. The material is characterized by having a composition selected from the group consisting of RE 3 Ga 5-x Al x SiO 14 (wherein RE represents a rare earth, and 0 | ||
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