| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a high-performance stacked thin-film photoelectric conversion device, capable of enhancing flexibility and improving production efficiency in manufacturing processes.SOLUTION : A method for manufacturing a stacked thin-film photoelectric conversion device at least including an amorphous photoelectric conversion unit, an n-type silicon composite layer and a crystalline photoelectric conversion unit in order from a light incident side, includes the steps of : forming the amorphous photoelectric conversion unit; forming the n-type silicon composite layer; exposing the formed n-type silicon composite layer in the atmosphere; subjecting the n-type silicon composite layer subjected to the atmosphere exposure to atmospheric pressure plasma treatment when a mixed gas of a dilution gas composed of nitrogen or a rare gas, and an oxygen-contained vapor is introduced; and then forming a p-type semiconductor layer of the crystalline photoelectric conversion unit in a decompressed state. The method may include no step of further forming the n-type silicon composite layer after the step of subjecting the n-type silicon composite layer to the atmospheric pressure plasma treatment. |
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