| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device manufactured by a method of a simple manufacturing process.SOLUTION : A semiconductor device according to an embodiment comprises : a substrate; a catalyst metal film on the substrate; a graphene on the catalyst metal film; an interlayer insulation film on the graphene; a contact hole penetrating the interlayer insulation film; and carbon nanotubes provided in the contact hole on the catalyst metal film processed by plasma of one and more gases selected from hydrogen, nitrogen, ammonia, and an inert gas, or carbon nanotubes penetrating the interlayer insulation film on the catalyst metal film processed by plasma of one and more gases selected from hydrogen, nitrogen, ammonia, and an inert gas. |
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