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MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURIN 发明申请

2023-06-20 4970 2554K 0

专利信息

申请日期 2025-07-07 申请号 US13419011
公开(公告)号 US20130069182A1 公开(公告)日 2013-03-21
公开国别 US 申请人省市代码 全国
申请人 Yuichi OHSAWA; Tadaomi Daibou; Yushi Kato; Eiji Kitagawa; Saori Kashiwada; Minoru Amano; Junichi Ito
简介 According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.


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