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LASER DESIGN 检索报告

2023-09-28 4540 40K 0

专利信息

申请日期 2025-06-25 申请号 WOUS12037632
公开(公告)号 WO2013019300A3 公开(公告)日 2013-03-07
公开国别 WO 申请人省市代码 全国
申请人 CRYSTAL GENESIS LLC; WECHSLER Barry A; SCRIPSICK Michael P; SUMIDA David S; CROW Thomas G
简介 A laser gain element including an undoped layer of a monoclinic double tungstate (MDT) crystal, and a method of forming a laser gain element are provided. The laser gain element includes a layer of doped MDT crystal adjacent to the undoped layer, the doped MDT layer including a pre-selected concentration of rare earth ions. The layer of doped MDT crystal has an absorption peak at a first wavelength and an emission peak at a second wavelength longer than the first wavelength; and the layer of doped MDT crystal has a fluorescence emission with a weighted average at a third wavelength shorter than the first wavelength. A laser resonator cavity formed with a plurality of composite gain elements as above is also provided.


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