| 申请日期 | 2025-07-11 | 申请号 | JP2012207445 |
| 公开（公告）号 | JP2013040093A | 公开（公告）日 | 2013-02-28 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | FUKUDA CRYSTAL LABORATORY | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a material for a piezoelectric device used at a high temperature range, which can be used in the high temperature range exceeding 400°C and has a resistivity thereof whose temperature dependence is low.
SOLUTION : The material is characterized by having a composition selected from the group consisting of RE3Ga5-xAlxSiO14 (wherein RE represents a rare earth, and 0 | ||
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