| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device including an oxide semiconductor with stable electric characteristics and high reliability.
SOLUTION : Provided are a transistor in which an oxide semiconductor layer containing indium, titanium, and zinc is used as a channel formation region, and a semiconductor device including the transistor. As a buffer layer in contact with the oxide semiconductor layer, a metal oxide layer can be used which contains an oxide of one or more elements selected from titanium, aluminum, gallium, zirconium, hafnium, and rare earth elements.
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