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Semiconductor ceramic material 发明授权

2023-03-24 1720 109K 0

专利信息

申请日期 2025-06-29 申请号 JP2009519237
公开(公告)号 JP5152182B2 公开(公告)日 2013-02-27
公开国别 JP 申请人省市代码 全国
申请人 Murata Manufacturing Co Ltd6231
简介 The following material is provided : a semiconductor ceramic material which contains no Pb and has a high Curie point, low resistivity, and PTC characteristics. The semiconductor ceramic material is represented by the formula ABO 3 and has PTC characteristics, wherein A includes Ba, Ca, an alkali metal element, Bi, and a rare-earth element and B includes Ti. The semiconductor ceramic material contains 5 to 20 molar parts and preferably 12.5 to 17.5 molar parts of Ca per 100 molar parts of Ti. A ratio of the content of the alkali metal element to the sum of the content of the bismuth plus the content of the rare earth element, is preferably from 1.00 to 1.06. The semiconductor ceramic material preferably further contains 0.01 to 0.2 molar parts of Mn per 100 molar parts of Ti.


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