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Semiconductor device 发明申请

2023-01-06 3580 298K 0

专利信息

申请日期 2025-07-18 申请号 JP2012152148
公开(公告)号 JP2013038402A 公开(公告)日 2013-02-21
公开国别 JP 申请人省市代码 全国
申请人 SEMICONDUCTOR ENERGY LAB CO LTD
简介 PROBLEM TO BE SOLVED : To impart stable electrical characteristics to a semiconductor device using an oxide semiconductor, and to improve the reliability of the semiconductor device. SOLUTION : There are provided a transistor including an oxide semiconductor layer in which buffer layers composed of the same component as the oxide semiconductor layer are provided on an upper surface part and a lower surface part of the oxide semiconductor layer, and a semiconductor device including the transistor. As the buffer layers to be brought in contact with the oxide semiconductor layer, a film containing an oxide of one or more elements selected from aluminum, gallium, zirconium, hafnium, and a rare-earth element can be applicable. COPYRIGHT : (C)2013, JPO&INPIT


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