| 简介 |
PROBLEM TO BE SOLVED : To provide an inexpensive bonding wire W that has high bondability to an Ni/Pd/Au coated electrode having high-temperature reliability and less damages a brittle chip.
SOLUTION : There is provided a silver bonding wire of 10-50 μm in wire diameter for connecting an Ni/Pd/Au coated electrode (a) of a semiconductor element and a conductor wire (c) of a circuit wiring board to each other by a ball bonding method. A coating layer 2 of Pt or Pd is formed on an outer peripheral surface of a core material 1, and the ratio (%) of the cross section of the coating layer and the cross section of the wire is 0.1-0.6%. A spherical FAB (ball (b)) which is shown in Fig. (a), (b) and has no undissolved part (hollow) can be obtained by attaining to the cross section ratio and a coating thickness (t), so chip damage is hardly caused. The core material 1 contains one or more kinds selected out of Pd, Pt and Au by 0.5-5.0 mass% in total, and one kind or more of elements selected out of Ca, Cu, and rare earth by 5-500 mass% in total, the remainder comprising Ag and inevitable impurities.
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