| 简介 |
Rare earth oxy-nitride buffered III-N on silicon includes a silicon substrate with a rare earth oxide (REO) structure, including several REO layers, is deposited on the silicon substrate. A layer of single crystal rare earth oxy-nitride is deposited on the REO structure. The REO structure is stress engineered to approximately crystal lattice match the layer of rare earth oxy-nitride so as to provide a predetermined amount of stress in the layer of rare earth oxy-nitride. A III oxy-nitride structure, including several layers of single crystal rare earth oxy-nitride, is deposited on the layer of rare earth oxy-nitride. A layer of single crystal III-N nitride is deposited on the III oxy-nitride structure. The III oxy-nitride structure is chemically engineered to approximately crystal lattice match the layer of III-N nitride and to transfer the predetermined amount of stress in the layer of rare earth oxy-nitride to the layer of III-N nitride. |
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