| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing a semiconductor device with high productivity and high reliability.
SOLUTION : A method of manufacturing a semiconductor device according to an embodiment comprises the steps of : forming a film containing an impurity element, which is added to a semiconductor layer, on the semiconductor layer; and irradiating the film with a first gas, which is in a plasma state containing a first rare gas atom, and a second gas, which is in a plasma state containing a second rare gas atom having an atomic mass smaller than that of the first rare gas atom or hydrogen (H).
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