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MAGNETORESISTANCE EFFECT ELEMENT AND MANUFACTURING METHOD OF THE SAME 发明申请

2023-07-22 2390 117K 0

专利信息

申请日期 2025-07-07 申请号 JP2011145867
公开(公告)号 JP2013012681A 公开(公告)日 2013-01-17
公开国别 JP 申请人省市代码 全国
申请人 TOSHIBA CORP
简介 PROBLEM TO BE SOLVED : To provide a magnetoresistance effect element capable of stably operating, and to provide a manufacturing method of the same. SOLUTION : A magnetoresistance effect element of one embodiment includes : a bottom electrode; a first magnetic layer; a first interfacial magnetic layer; a second interfacial magnetic layer; a second magnetic layer; and an upper electrode. The first magnetic layer is disposed on the bottom electrode. The first interfacial magnetic layer is disposed on the first magnetic layer. The non-magnetic layer is disposed on the first interfacial magnetic layer. The second magnetic layer is disposed on the second interfacial magnetic layer. The upper electrode is disposed on the second magnetic layer. The first magnetic layer is one of a magnetization storage layer and a magnetization reference layer, and the second magnetic layer is the other. The upper electrode includes an alloy layer or a mixture layer of precious metal and a transition element or a rare earth element, or a conductive oxide layer. COPYRIGHT : (C)2013, JPO&INPIT


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