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Sputtering target and its manufacturing method 发明授权

2023-07-27 5340 5326K 0

专利信息

申请日期 2025-06-27 申请号 JP2009118275
公开(公告)号 JP5122514B2 公开(公告)日 2013-01-16
公开国别 JP 申请人省市代码 全国
申请人 Nippon Mining amp; Metals Co Ltd Nippon Oil JX502362758
简介 A sintered sputtering target having a structure where the average crystallize size is 1 nm to 50nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. Thereby provided is a high density target having an extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production.


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