| 简介 |
PROBLEM TO BE SOLVED : To provide a method for producing a nitride semiconductor crystal having low impurity concentration such as oxygen at a high growth rate.
SOLUTION : A zinc halide is used as a mineralizer when growth of the nitride semiconductor crystal 2 is performed in the presence of a solvent 3 in a supercritical state and/or in a subcritical state in a reaction vessel. A compound containing a halogen atom, an alkali metal, an alkaline earth metal or a rare earth metal, which is a compound other than the zinc halide, may be used together. The reaction vessel is a capsule composed of a platinum group or alloy containing the platinum group.
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