| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device which can control a threshold voltage of a MOSFET by simple and easy implementation means and a manufacturing method of the same.
SOLUTION : According to an embodiment, a field effect transistor comprises : a semiconductor substrate 402 including STI (Shallow Trench Isolation); p-FET 401 and n-FET 403; a silicon germanium layer 800 in a dent of the substrate, in which the p-FET 401 is formed; gate dielectrics 414, 432 provided on the n-FET and the silicon germanium layer, and containing a hafnium compound and a rare-earth compound; and gate electrodes 416, 434 respectively arranged on the gate dielectrics 414, 432 and containing the same material.
COPYRIGHT : (C)2013, JPO&INPIT |
客服热线：
手机版
二维码
