| 简介 |
PROBLEM TO BE SOLVED : To provide a technology of preventing oxidation of Cu wiring effectively during plasma processing in protective film formation, in a display device using an oxide semiconductor layer.
SOLUTION : On a substrate 1, the semiconductor layer 4 of a thin film transistor, a Cu alloy film 5 used for an electrode, and a protective film 6 are provided sequentially from the substrate side, and the semiconductor layer is made of an oxide semiconductor. The Cu alloy film 5 has a laminate structure including a first layer(X) 5a and a second layer(Z) 5b sequentially from the substrate side. The first layer(X) is made of pure Cu, or a Cu alloy containing Cu as a main component and having an electrical resistivity lower than that of the second layer(Z). The second layer(Z) is made of a Cu-Z alloy containing total 2-20 atom% of at least one element selected from a group consisting of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, rare earth elements, Ge, and Mn, and at least a part of the second layer(Z) is connected directly with the protective film.
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