| 申请日期 | 2025-07-08 | 申请号 | JP2012517662 |
| 公开（公告）号 | JP2012531749A | 公开（公告）日 | 2012-12-10 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | Solar Junction Corporation511314290 | ||
| 简介 | Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure. Such tunnel junctions survive thermal energy conditions (time/temperature) in the range required for dilute nitride material integration into III-V multi-junction solar cells. | ||
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