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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 发明授权

2023-06-01 4050 559K 0

专利信息

申请日期 2025-07-21 申请号 KR1020100052818
公开(公告)号 KR101204603B1 公开(公告)日 2012-11-19
公开国别 KR 申请人省市代码 全国
申请人 KABUSHIKI KAISHA HITACHI SEISAKUSHO(D/B/A HITACHI LTD); Kabushiki Kaisha Hitachi Seisakusho(d/b/a Hitachi Ltd)
简介 A problem of a resist mask collapse due to a plasma process is solved. In a method of manufacturing a semiconductor device including steps of a plasma process to a sample having a mask made of an organic material, the plasma process includes a first step of a plasma process under a gas containing any of fluorine, oxygen, or nitrogen, or containing all of them, and a second step of the plasma process under a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen, and the first step and the second step are repeated.


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