| 申请日期 | 2025-06-28 | 申请号 | US13020925 |
| 公开（公告）号 | US8310863B2 | 公开（公告）日 | 2012-11-13 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Jonathan Zanhong Sun; Stuart Stephen Papworth Parkin | ||
| 简介 | A method of fabricating a magnetic memory element includes forming a plurality of magnetic layers having a perpendicular magnetic anisotropy component, in which the plurality of magnetic layers includes a first magnetic layer having an alloy of a rare-earth metal and a transition metal, and a second magnetic layer. | ||
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