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RAW MATERIAL SOLUTION FOR FORMATION OF OXIDE SUPERCONDUCTING THIN FILM LAYER, OXIDE SUPERCONDUCTING 发明申请

2023-03-09 2630 379K 0

专利信息

申请日期 2025-08-22 申请号 JP2011090178
公开(公告)号 JP2012221922A 公开(公告)日 2012-11-12
公开国别 JP 申请人省市代码 全国
申请人 SUMITOMO ELECTRIC IND LTD
简介 PROBLEM TO BE SOLVED : To provide an oxide superconducting thin film wire material having a desired high superconducting property by producing, by Metal Organic Deposition (MOD) method, an oxide superconducting thin film without forming RE211 making a different phase. SOLUTION : The raw material solution for formation of an oxide superconducting thin film layer is used in forming, by MOD method, an oxide superconducting thin film layer on an intermediate layer formed on an oriented metal base. The raw material solution comprises : a solvent; and organic metal compounds of RE(rare earth element), Ba(barium) and Cu(copper) which are dissolved in the solvent in the ratio, RE : Ba : Cu=X : 2 : 3(0.8≤X<1.0). The oxide superconducting thin film layer is formed on an intermediate layer formed on an oriented metal base by MOD method, and in the oxide superconducting thin film layer, no RE2Ba1Cu1O5 phase is formed. The oxide superconducting thin film wire material comprises : an oriented metal base; an intermediate layer formed on the oriented metal base; and the oxide superconducting thin film layer formed on the intermediate layer. COPYRIGHT : (C)2013, JPO&INPIT


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