| 简介 |
PROBLEM TO BE SOLVED : To provide a technology of forming a semiconductor layer by controlling the concentration of a dopant.SOLUTION : When forming a semiconductor layer 26 by sputtering a second main target 42 in a vacuum column 51 with a sputtering gas containing a rare-gas and a reactive gas thereby making the target arrive at the surface of an object 28 to be deposited, a dopant arranged in the vacuum column 51 is heated as a deposition material 64 to produce vapor thereof and the vapor is made to arrive at the surface of the object 28 to be deposited thus forming a semiconductor layer 26 containing the dopant. Since the vapor of the deposition material 64 is reduced when it is made to pass through the through hole 66 of a discharge amount limit member 63 arranged between the object 28 to be deposited and the deposition material 64, a small amount of the vapor can be made to be contained in the semiconductor layer 26.COPYRIGHT : (C)2013, JPO&INPIT |
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