| 简介 |
PROBLEM TO BE SOLVED : To sputter a sub-target without causing reaction of the sub-target and a reaction gas introduced into a vacuum column.
SOLUTION : When forming a semiconductor layer 26 by sputtering a main target 42 in a vacuum column 51 with a main sputtering gas containing a rare-gas and a reactive gas and making the main target 42 arrive at the surface of an object 28 to be deposited, a separation container 62 is arranged in the vacuum column 51, and the sub-target 64 of dopant is arranged in the separation container 62. Exterior and interior of the separation container 62 are evacuated, separately, by a main exhauster 47 and a sub-exhauster 65. When a rare-gas is supplied into the separation container 62, the sub-target is sputtered without coming into contact with the reactive gas, and a reaction product of a material composing the sub-target 64 is not produced.
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