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MANUFACTURING METHOD FOR GROUP 13 ELEMENT NITRIDE CRYSTAL, GROUP 13 ELEMENT NITRIDE CRYSTAL OBTAINE 发明申请

2023-06-10 3130 94K 0

专利信息

申请日期 2026-04-25 申请号 JP2012023913
公开(公告)号 JP2012214359A 公开(公告)日 2012-11-08
公开国别 JP 申请人省市代码 全国
申请人 MITSUBISHI CHEMICALS CORP
简介 PROBLEM TO BE SOLVED : To provide a method for manufacturing a group 13 element nitride crystal inexpensively on an industrial basis which maintains sufficient crystal growth rate stably and continuously. SOLUTION : In the method for manufacturing a group 13 element nitride crystal, a group 13 element nitride crystal is grown within a liquid phase 9 containing at least an alkali metal element or an alkaline-earth metal element, a group 13 element, and nitrogen element while removing the alkali metal element or the alkaline-earth metal element from the liquid phase. The removing rate of the alkali metal element or the alkaline-earth metal element from the liquid phase is ≥0.0020 mg/h/cm3. COPYRIGHT : (C)2013, JPO&INPIT


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