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TITANIUM-DOPED AMORPHOUS ALUMINUM NITRIDE MICROLASER DEVICE AND METHOD FOR MAKING AND USING SAME 发明申请

2023-08-03 2750 600K 0

专利信息

申请日期 2025-07-09 申请号 US13399662
公开(公告)号 US20120274944A1 公开(公告)日 2012-11-01
公开国别 US 申请人省市代码 全国
申请人 MAQBOOL MUHAMMAD; MAIN KYLE
简介 A microlaser system, including a microlaser, having an elongated generally cylindrical substrate, a thin dopant film encircling at least a portion of the substrate, and a pumping laser positioned to shine onto the thin film. The thin film is between about 2 and about 10 microns thick. When the pumping laser shines on the thin film, the thin film lases in whispering gallery mode. The dopant is preferably selected from the group including transition metals and rare-earth elements. In a most preferred embodiment, the thin film is titanium-doped amorphous aluminum nitride.


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