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For high frequency component of the low dielectric constant ceramic substrate manufacturing method 发明授权

2023-12-02 4030 86K 0

专利信息

申请日期 2025-07-17 申请号 JP2009121171
公开(公告)号 JP5062220B2 公开(公告)日 2012-10-31
公开国别 JP 申请人省市代码 全国
申请人 Murata Manufacturing Co Ltd6231
简介 PROBLEM TO BE SOLVED : To provide a low permittivity ceramic substrate low in relative permittivity, small in loss in a high frequency zone, and small in temperature dependence, enabling low temperature sintering where conductors having high electric conductivity such as Ag, Au and Cu can be simultaneously sintered, and a method for manufacturing the same. SOLUTION : This low permittivity ceramic substrate for high frequency components contains at least an LnBO3crystal (Ln is one or more rare earth elements among Y, La and Nd) and is obtained by firing a raw material comprising, in mol% of components expressed by oxides, 40-65% Al2O3, 15-35% B2O3, 10-20% CaO, 0.1-14% ZnO, 0-2% MnO, 0-2% R2O (R is one or more among Li, Na and K) and 0.1-2% Ln2O3. COPYRIGHT : (C)2009, JPO&INPIT


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