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AMORPHOUS CARBON FILM AND METHOD FOR FORMING SAME 发明申请

2023-07-28 3000 1812K 0

专利信息

申请日期 2025-06-26 申请号 WOJP12060664
公开(公告)号 WO2012144580A1 公开(公告)日 2012-10-26
公开国别 WO 申请人省市代码 全国
申请人 NTN CORPORATION; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; OOHIRA Kouya; NAKANISHI Masaki; TAGUCHI Yosuke; NAKAO Setsuo
简介 Provided are : a film forming method which enables the formation of a good amorphous carbon film using a power supply for a bipolar PBII device in a low vacuum; and an amorphous carbon film which is obtained by the film forming method. A method for forming an amorphous carbon film using a power supply for a bipolar PBII device in a low vacuum (at about 1, 000-30, 000 Pa), wherein a power supply-side electrode (3) that is connected to a power supply (6) for a PBII device and an earth-side electrode (4) that faces the electrode (3) are arranged within a chamber (1), a base (2) is disposed on the power supply-side electrode (3) or the earth-side electrode (4), and an amorphous carbon film is formed on the surface of the base (2) by generating plasma of a rare gas and a hydrocarbon-containing gas between the base (2) and the electrode on which the base (2) is not disposed.


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