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TRANSPARENT ELECTRODE FILM FOR PHOTODETECTOR AND PHOTODETECTOR 发明申请

2023-08-21 1850 58K 0

专利信息

申请日期 2025-07-11 申请号 JP2011056472
公开(公告)号 JP2012195074A 公开(公告)日 2012-10-11
公开国别 JP 申请人省市代码 全国
申请人 SUMITOMO CHEMICAL CO
简介 PROBLEM TO BE SOLVED : To provide a transparent electrode film for photodetector comprising an inexpensive oxide transparent electrode film exhibiting excellent transmissivity not only in the visible light region but also in the near infrared region, and not using a rare metal having a low resistance, and to provide a photodetector equipped with the same. SOLUTION : The transparent electrode film for photodetector comprises an oxide transparent electrode film formed by doping a zinc oxide with a low valence metal oxide as a dopant. The oxide transparent electrode film is primarily composed of zinc oxide and is deposited by sputtering, ion plating, pulse laser deposition (PLD method) or electron beam (EB) vapor deposition by using a target or a tablet doped with a low valence metal oxide. The low valence metal oxide is doped at an atomic ratio 0.02-0.1 of a low valence metal and zinc, and the specific resistance of the oxide transparent electrode film is 2.0×10-3 Ω cm or less. COPYRIGHT : (C)2013, JPO&INPIT


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