| 申请日期 | 2025-06-27 | 申请号 | US13251086 |
| 公开（公告）号 | US20120256232A1 | 公开（公告）日 | 2012-10-11 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Andrew Clark; F Erdem Arkun; Michael Lebby | ||
| 简介 | Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed. | ||
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