| 简介 |
PROBLEM TO BE SOLVED : To provide a thin film deposition apparatus capable of measuring concentration of gases such as SiH4 gas with a precision higher than those in conventional ones.
SOLUTION : The thin film deposition apparatus for depositing a thin film on a substrate includes : a film deposition vessel equipped with a laser irradiation window; a material gas supplying part that supplies a material gas of thin film raw materials to the film deposition vessel; a rare gas adding part that adds rare gas to the material gas; a plasma generating part that generates plasma inside the film deposition vessel; a laser irradiation part that irradiates the interior of the film deposition vessel with a laser beam through the laser irradiation window; a detection part that detects a response of a space inside the film deposition vessel to the laser beam irradiated by the laser irradiation part; and a control part that controls the flow amount of the material gas supplied by the material gas supplying part based on results detected by the detection part.
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