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Rare earth iron garnet single crystal 发明授权

2022-12-30 2220 42K 0

专利信息

申请日期 2025-06-25 申请号 JP2007265036
公开(公告)号 JP5033945B2 公开(公告)日 2012-09-26
公开国别 JP 申请人省市代码 全国
申请人 Guranoputo Inc505418434
简介 PROBLEM TO BE SOLVED : To provide a bismuth-substituted rare earth iron garnet single crystal which can be stably grown by a liquid phase epitaxial (LPE) method not using lead as a flux component, is easily mass-produced, and has low insertion loss and a large Faraday effect. SOLUTION : The rare earth iron garnet single crystal is a bismuth and calcium-substituted rare earth iron garnet single crystal which is grown on a non-magnetic garnet single crystal substrate by the LPE method not using a lead component as flux and shown by general formula : R3-x-y-wBixCayMwFe5-z-vAzPtvO12(1), wherein, R is one or two or more kinds of elements selected from the group comprising Y, Eu, Gd, Tb, Ho, Yb and Lu; M is one or two or more kinds of elements selected from Na and K; A is Ga or Al or both; 0.7COPYRIGHT : (C)2009, JPO&INPIT


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