| 简介 |
PROBLEM TO BE SOLVED : To provide a solid state memory having performance equivalent to that of a solid state memory using a Ge-Sb-Te alloy, while the solid state memory is Sb-free, Sb being rare metal, in place of the Ge-Sb-Te alloy widely used as a recording layer of a solid state memory until now.
SOLUTION : A solid state memory 10 includes a recording layer 11 in which electrical characteristics are changed due to a phase change of substances. The recording layer 11 comprises a super lattice obtained by laminating a thin film 4 formed of germanium and tellurium and a thin film 5 formed of copper and tellurium.
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